Erbium environments in erbium-silicon/silica light emitting nanostructures
نویسندگان
چکیده
منابع مشابه
Erbium emission in MOS light emitting devices: from energy transfer to direct impact excitation.
The electroluminescence (EL) at 1.54 μm of metal–oxide–semiconductor (MOS) devices withEr3C ions embedded in the silicon-rich silicon oxide (SRSO) layer has been investigated under different polarization conditions and compared with that of erbium doped SiO2 layers. EL time-resolved measurements allowed us to distinguish between two different excitation mechanisms responsible for the Er3C emiss...
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Current-injected 1.54 m emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365 nm nitride light emitting diodes. It was found that the 1.54 m emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped...
متن کاملCritical Exponents of Erbium
The exponent P that describes the sinusoidally modulate d * paramagnetic phase transition crosses over from a value of 0.39 near TN to a mean field value away from TN. Electrical resistivity measurements near TN are given for the c axis and the critical behaviour is discussed. Erbium orders below its NBel temperature TN= 85 K with its spins directed along the c axis of the hcp crystal and with ...
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Silicon microphotonics has emerged as the leading technology to overcome the interconnect bottleneck that limits a further increase of computation power following Moore's law. Optical interconnects between different electronic microprocessors in an electronic-photonic integrated circuit (EPIC) can provide a fast, low-loss and highbandwidth alternative to electrical interconnects, which suffer f...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2011
ISSN: 1742-6596
DOI: 10.1088/1742-6596/281/1/012016